Complementary Metal-Oxide-Semiconductor (CMOS) technology is a vital part of modern electronics, used in designing and manufacturing integrated circuits (ICs) that power many digital devices. CMOS ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
X-FAB has added three new low-noise transistors to its 180nm process node: a 1.8 V low-noise NMOS, a 3.3 V low-noise NMOS and a 3.3 V low-noise PMOS – all of which offer drastically reduced flicker ...
KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...